Switching and filamentary conduction in non-volatile organic memories

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Cite
Cölle, Michael, et al. “Switching and Filamentary Conduction in Non-Volatile Organic Memories”. Organic Electronics, vol. 7, no. 5, 2006, pp. 305-12, https://doi.org/10.1016/j.orgel.2006.03.014.
Cölle, M., Büchel, M., & de Leeuw, D. M. (2006). Switching and filamentary conduction in non-volatile organic memories. Organic Electronics, 7(5), 305-312. https://doi.org/10.1016/j.orgel.2006.03.014
Cölle, Michael, Michael Büchel, and Dago M. de Leeuw. “Switching and Filamentary Conduction in Non-Volatile Organic Memories”. Organic Electronics 7, no. 5 (2006): 305-12. https://doi.org/10.1016/j.orgel.2006.03.014.
Cölle M, Büchel M, de Leeuw DM. Switching and filamentary conduction in non-volatile organic memories. Organic Electronics. 2006;7(5):305-12.
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Citations
Title Journal Journal Categories Citations Publication Date
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  • Science: Physics
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  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
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  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
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Advanced Materials
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  • Science: Chemistry: Physical and theoretical chemistry
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  • Science: Physics
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Rewritable resistive memory effect in poly[N-(3-(9H-carbazol-9-yl)propyl)-methacrylamide] memristor

Journal of Materials Chemistry C
  • Science: Chemistry
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  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology
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Citations Analysis
The category Technology: Chemical technology 154 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Electronic Memory Effects in Zinc Oxide Nanoparticle -Polystyrene Devices with a Calcium Top Electrode and was published in 2006. The most recent citation comes from a 2024 study titled ITO/polymer/Al from diode-like to memory device: electroforming, multilevel resistive switching, and quantum point contact. This article reached its peak citation in 2008, with 22 citations. It has been cited in 80 different journals, 11% of which are open access. Among related journals, the Applied Physics Letters cited this research the most, with 29 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year