Interfacial properties of semiconducting transition metal chalcogenides

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JAEGERMANN, W, and H TRIBUTSCH. “Interfacial Properties of Semiconducting Transition Metal Chalcogenides”. Progress in Surface Science, vol. 29, no. 1-2, 1988, pp. 1-167, https://doi.org/10.1016/0079-6816(88)90015-9.
JAEGERMANN, W., & TRIBUTSCH, H. (1988). Interfacial properties of semiconducting transition metal chalcogenides. Progress in Surface Science, 29(1-2), 1-167. https://doi.org/10.1016/0079-6816(88)90015-9
JAEGERMANN W, TRIBUTSCH H. Interfacial properties of semiconducting transition metal chalcogenides. Progress in Surface Science. 1988;29(1-2):1-167.
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The category Science: Chemistry 109 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Ag on p-WSe2(0001) surfaces: approaching the Schottky limit? and was published in 1990. The most recent citation comes from a 2024 study titled Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts. This article reached its peak citation in 2017, with 18 citations. It has been cited in 89 different journals, 7% of which are open access. Among related journals, the The Journal of Physical Chemistry C cited this research the most, with 9 citations. The chart below illustrates the annual citation trends for this article.
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