Title	Publication Date	Language	Citations
Hybrid quantum systems based on magnonics	2019/06/04		405
A 271.8 nm deep-ultraviolet laser diode for room temperature operation	2019/11/08		197
Indication of current-injection lasing from an organic semiconductor	2019/05/31		194
Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation	2019/08/21		130
Defect engineering in SiC technology for high-voltage power devices	2020/11/26		128
Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays	2020/12/16		100
Highly sensitive refractive-index sensor based on strong magnetic resonance in metamaterials	2019/04/16		91
Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire	2020/02/28		73
Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures	2019/05/08		61
Tunable ultra-broadband anisotropic absorbers based on multi-layer black phosphorus ribbons	2019/02/25		60
U-shaped photonic quasi-crystal fiber sensor with high sensitivity based on surface plasmon resonance	2019/04/15		59
A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm2 on-resistance	2019/07/12		58
Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown	2019/02/01		58
Demonstration of low forward voltage InGaN-based red LEDs	2020/02/11		55
Two-dimensional multicolor (RGBY) integrated nanocolumn micro-LEDs as a fundamental technology of micro-LED display	2019/12/06		55
Heat flux sensing by anomalous Nernst effect in Fe–Al thin films on a flexible substrate	2020/03/09		53
A thin multi-order Helmholtz metamaterial with perfect broadband acoustic absorption	2019/07/18		52
Thickness dependence of superconductivity in ultrathin NbS2	2019/02/01		48
Atom-based receiver for amplitude-modulated baseband signals in high-frequency radio communication	2019/11/20		48
Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy	2019/10/15		47
Improve efficiency and long lifetime UVC LEDs with wavelengths between 230 and 237 nm	2020/01/21		47
Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes	2019/05/23		47
Operation of BaSi2 homojunction solar cells on p+-Si(111) substrates and the effect of structure parameters on their performance	2019/03/19		45
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy	2012/02/28	English	45
Red-emitting In x Ga1−x N/In y Ga1−y N quantum wells grown on lattice-matched In y Ga1−y N/ScAlMgO4(0001) templates	2018/12/20		45
Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio	2021/12/15		43
High-energy dissipative soliton resonance and rectangular noise-like pulse in a figure-9 Tm fiber laser	2018/12/03		41
Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate	2021/09/01		41
Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1−x )2O3/β-Ga2O3 heterostructure channels	2021/01/12		41
4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm−2	2022/05/16		41