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Applied Physics Express
Title
Publication Date
Language
Citations
Highly tunable, polarization-engineered two-dimensional electron gas in ε-AlGaO3/ε-Ga2O3 heterostructures
2020/05/26
39
Design and optimization of a flexible water-based microwave absorbing metamaterial
2019/04/03
38
Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors
2019/02/26
38
The benefits of an asymmetric tri-stable energy harvester in low-frequency rotational motion
2019/04/03
38
130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts
2021/06/22
37
Broadband tunable terahertz cross-polarization converter based on Dirac semimetals
2019/06/10
37
Broadband ultra-thin acoustic metasurface absorber with coiled structure
2019/10/14
37
Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut
2021/02/24
37
Electrical and optical properties of Zr doped β-Ga2O3 single crystals
2019/07/03
37
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy
2020/05/28
37
Nanoarchitectonics Intelligence with atomic switch and neuromorphic network system
2022/09/30
37
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
2021/01/29
36
Energetics and electronic structure of native point defects in α-Ga2O3
2019/08/12
36
Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy
2020/03/09
36
Sub-pT magnetic field detection by tunnel magneto-resistive sensors
2021/11/22
35
Semipolar ( 20 21 ¯ ) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication
2019/11/29
35
Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates
2019/10/29
34
Correlation between depolarization temperature and lattice distortion in quenched (Bi1/2Na1/2)TiO3-based ceramics
2020/05/05
34
Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation
2020/08/14
34
Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates
2019/01/31
34
CoFeB/MgO-based magnetic tunnel junction directly formed on a flexible substrate
2019/04/10
34
Watt-class blue vertical-cavity surface-emitting laser arrays
2019/08/28
34
Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature
2021/09/30
33
Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping
2020/06/29
33
Tunable nonreciprocal reflection and its stability in a non-PT-symmetric plasmonic resonators coupled waveguide systems
2019/12/12
33
Surface related tunneling leakage in β-Ga2O3 (001) vertical Schottky barrier diodes
2019/06/28
32
Characterization of Eu-doped Ba2SiO4, a high light yield scintillator
2020/11/09
32
Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes
2019/04/24
32
Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm
2019/01/01
32
Low dislocation density AlN on sapphire prepared by double sputtering and annealing
2020/08/18
32
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