Resist development described by least action principle-line profile prediction

Article Properties
  • Language
    English
  • DOI (url)
  • Publication Date
    1988/11/01
  • Indian UGC (Journal)
  • Citations
    5
  • E. Barouch Department of Mathematics and Computer Science, Clarkson University, Potsdam, New York 13676
  • B. D. Bradie Department of Mathematics and Computer Science, Clarkson University, Potsdam, New York 13676
  • S. V. Babu Department of Chemical Engineering, Clarkson University, Potsdam, New York 13676
Abstract
Cite
Barouch, E., et al. “Resist Development Described by Least Action Principle-Line Profile Prediction”. Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena, vol. 6, no. 6, 1988, pp. 2234-7, https://doi.org/10.1116/1.584088.
Barouch, E., Bradie, B. D., & Babu, S. V. (1988). Resist development described by least action principle-line profile prediction. Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena, 6(6), 2234-2237. https://doi.org/10.1116/1.584088
Barouch E, Bradie BD, Babu SV. Resist development described by least action principle-line profile prediction. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 1988;6(6):2234-7.
Description

Unveiling the secrets of resist development with a groundbreaking approach. This paper introduces a novel concept: each development path follows the trajectory of least resistance to developer penetration. This innovative idea posits that the development of the final line profile requires minimal dissolution time. The authors achieve this by using a variational calculation of the path integral along each local development trajectory. This calculation uniquely determines the dissolution profile as a solution to a nonlinear partial differential equation (PDE). The photoactive compound (PAC) concentration is derived from the standard Dill’s equations for exposure-bleaching, accommodating both monotonic and standing waves. The implementation and testing of this procedure demonstrate remarkable accuracy, eliminating path crossings inherent in traditional string algorithms. This method also avoids the arbitrary elimination of unfavorable points across all developing times, offering a significant advancement in resist development modeling and prediction.

Citations
Citations Analysis
The first research to cite this article was titled Simulation of Three-Dimensional Positive Photoresist Images and was published in 1989. The most recent citation comes from a 2001 study titled Simulation of Three-Dimensional Positive Photoresist Images . This article reached its peak citation in 1996 , with 2 citations.It has been cited in 5 different journals. Among related journals, the Chemical Engineering Science cited this research the most, with 1 citations. The chart below illustrates the annual citation trends for this article.
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