Can local imperfections influence magnetism? This research investigates how local strain fields, caused by lattice defects in noncollinear antiferromagnetic films, affect their magnetic properties and anomalous Hall effect. These materials are of increasing interest for 'beyond von Neumann' computing applications. By comparing films with varying degrees of lattice mismatch to their substrates, the study reveals that edge dislocation networks create significant local strain fields. These strain fields induce finite intrinsic magnetization, even in structurally relaxed films, and influence the antiferromagnetic domain state. This work highlights the crucial role of local strain in manipulating the magnetic properties of these films. The findings provide valuable insights for optimizing material synthesis and device fabrication, paving the way for future advancements in antiferromagnetic spintronics and innovative computing technologies.
Published in Advanced Materials, this study is highly relevant to the journal's focus on cutting-edge materials science. By exploring the influence of strain fields on noncollinear antiferromagnets, the research contributes to the understanding of how material imperfections can be leveraged to engineer novel electronic properties, a key theme in advanced materials research.