IEEE Electron Device Letters

Title Publication Date Language Citations
Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress2001/12/0164
New salicidation technology with Ni(Pt) alloy for MOSFETs2001/12/0164
Single-event charge enhancement in SOI devices1990/02/0163
Nine-state resonant tunneling diode memory1992/09/0163
An ion-implanted diamond metal-insulator-semiconductor field-effect transistor1991/11/0163
MOS characteristics of ultrathin NO-grown oxynitrides1994/10/0163
Annealing-temperature dependence of the thermal conductivity of LPCVD silicon-dioxide layers1993/10/0162
Multicolor voltage-tunable quantum-well infrared photodetector1993/12/0162
Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessing1992/04/0162
Surface micromachined solenoid on-Si and on-glass inductors for RF applications1999/09/0162
Correlation between inversion layer mobility and surface roughness measured by AFM1996/04/0162
Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K1988/09/0161
High-speed and low-power operation of a resonant tunneling logic gate MOBILE1998/03/0161
Electron mobility behavior in extremely thin SOI MOSFET's1995/11/0161
High-performance submicrometer AlInAs-GaInAs HEMT's1988/01/0160
On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing2000/01/0160
45% efficient silicon photovoltaic cell under monochromatic light1992/06/0160
RTD/HFET low standby power SRAM gain cell1998/01/0160
Pulse-doped diamond p-channel metal semiconductor field-effect transistor1995/01/0160
InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices1996/03/0160
A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage1994/10/0160
A novel photodetector using MOS tunneling structures2000/06/0159
Deep-submicrometer MOS device fabrication using a photoresist-ashing technique1988/04/0159
Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si1991/06/0159
High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers1992/03/0159
A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation1994/12/0159
InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage1998/09/0159
Suppression of boron penetration in p/sup +/ polysilicon gate P-MOSFETs using low-temperature gate-oxide N/sub 2/O anneal1994/03/0159
Fast chemical sensing with metal-insulator silicon carbide structures1997/06/0158
High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy1992/04/0158