IEEE Transactions on Electron Devices

Title Publication Date Language Citations
Modeling and simulation of stress-induced leakage current in ultrathin SiO/sub 2/ films1998/07/01144
Mechanism of stress-induced leakage current in MOS capacitors1997/01/01143
The development of chelate metal complexes as an organic electroluminescent material1997/01/01142
Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures1994/01/01142
1/f noise and radiation effects in MOS devices1994/01/01141
Integrated movable micromechanical structures for sensors and actuators1988/06/01140
Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display1999/01/01139
Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules1998/01/01139
Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs1988/07/01139
Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB2001/03/01137
High performance low-temperature poly-Si n-channel TFTs for LCD1989/01/01136
Electric-field penetration into metals: consequences for high-dielectric-constant capacitors1999/04/01136
A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications2000/05/01136
Substrate crosstalk reduction using SOI technology1997/01/01134
A physics-based MOSFET noise model for circuit simulators1990/05/01132
Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling1997/01/01132
Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates1996/01/01131
Technology and reliability constrained future copper interconnects. I. Resistance modeling2002/04/01130
Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency1990/01/01129
Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs2002/01/01128
Excimer-laser-annealed poly-Si thin-film transistors1993/01/01128
The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices1990/01/01127
A high-speed capacitive humidity sensor with on-chip thermal reset2000/04/01126
Experimental evidence of inelastic tunneling in stress-induced leakage current1999/01/01123
Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties1999/03/01122
A comparative study of advanced MOSFET concepts1996/01/01122
On the performance limits for Si MOSFETs: a theoretical study2000/01/01122
Silicon carbide UV photodiodes1993/01/01120
High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing1995/01/01120
A multisensor employing an ultrasonic Lamb-wave oscillator1988/06/01120