IEEE Transactions on Electron Devices

Title Publication Date Language Citations
Microstructure and reliability of copper interconnects1999/06/01119
Self-heating effects in SOI MOSFETs and their measurement by small signal conductance techniques1996/01/01118
Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors1989/01/01117
A spacer patterning technology for nanoscale CMOS2002/03/01117
Capacitance-voltage measurements on metal-SiO/sub 2/-diamond structures fabricated with1991/03/01117
GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application1989/01/01117
Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures2001/04/01116
Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers1999/03/01116
Critical discussion on unified 1/f noise models for MOSFETs2000/01/01116
Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study2001/04/01115
Theory and application of charge pumping for the characterization of Si-SiO/sub 2/ interface and near-interface oxide traps1994/07/01115
Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's1997/04/01114
Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's1999/03/01114
Characterization of n-type beta -SiC as a piezoresistor1993/06/01113
Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs1996/01/01113
Self-assembled Ge/Si dots for faster field-effect transistors2001/06/01113
Modeling of ultrathin double-gate nMOS/SOI transistors1994/05/01113
A compact scattering model for the nanoscale double-gate MOSFET2002/03/01113
Si/SiGe epitaxial-base transistors. II. Process integration and analog applications1995/03/01113
Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface1990/04/01113
Mechanical stress as a function of temperature in aluminum films1988/01/01112
Leakage current mechanism in sub-micron polysilicon thin-film transistors1996/01/01112
Space-charge-limited current in a film1989/06/01112
1/f noise in MODFETs at low drain bias1990/01/01112
Quantum device-simulation with the density-gradient model on unstructured grids2001/01/01112
Modeled tunnel currents for high dielectric constant dielectrics1998/06/01111
A new analytical diode model including tunneling and avalanche breakdown1992/01/01111
Floating body effects in polysilicon thin-film transistors1997/01/01110
Physics and numerical simulation of single photon avalanche diodes1997/01/01110
Direct-current measurements of oxide and interface traps on oxidized silicon1995/01/01109