IEEE Transactions on Electron Devices

Title Publication Date Language Citations
Organic EL cells using alkaline metal compounds as electron injection materials1997/01/01168
UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs1991/03/01168
Insulator investigation on SiC for improved reliability1999/03/01168
Energy level alignment at organic/metal interfaces studied by UV photoemission: breakdown of traditional assumption of a common vacuum level at the interface1997/01/01167
Sub-50 nm P-channel FinFET2001/05/01166
Short-channel effects in SOI MOSFETs1989/03/01165
A new look at impact ionization-Part I: A theory of gain, noise, breakdown probability, and frequency response1999/01/01163
Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic1989/01/01162
Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices1999/07/01161
Thermally excited silicon microactuators1988/06/01161
Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's1991/06/01160
Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers1998/07/01160
Performance limiting surface defects in SiC epitaxial p-n junction diodes1999/03/01160
Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs1989/09/01158
AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise2001/03/01157
SiC power Schottky and PiN diodes2002/04/01157
Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes1992/03/01157
Secondary emission formulas1993/04/01154
A three-step method for the de-embedding of high-frequency S-parameter measurements1991/06/01154
Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon2000/01/01153
Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI1997/03/01153
Determination of Si-SiO/sub 2/ interface recombination parameters using a gate-controlled point-junction diode under illumination1988/01/01152
Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2<or=V/sub g/>or=V/sub d/) during hot-carrier stressing of n-MOS transistors1990/03/01151
RF-CMOS performance trends2001/01/01150
The effect of fluorine in silicon dioxide gate dielectrics1989/05/01150
High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications2000/01/01148
High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination1999/03/01147
Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides1993/05/01146
Optimization of the specific on-resistance of the COOLMOS/sup TM/2001/01/01146
Whole-chip ESD protection design with efficient VDD-to-VSS ESD clamp circuits for submicron CMOS VLSI1999/01/01145