IEEE Transactions on Electron Devices

Title Publication Date Language Citations
Demonstration of an SiC neutron detector for high-radiation environments1999/03/0199
Impact-ionization and noise characteristics of thin III-V avalanche photodiodes2001/01/0199
Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit1991/01/0199
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices2001/01/0198
Giant isotope effect in hot electron degradation of metal oxide silicon devices1998/01/0197
Avalanche multiplication noise characteristics in thin GaAs p/sup +/-i-n/sup +/ diodes1998/01/0197
A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs1993/01/0197
A physical model for threshold voltage instability in Si/sub 3/N/sub 4/-gate H/sup +/-sensitive FET's (pH ISFET's)1998/06/0197
A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes1999/01/0197
Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels1999/01/0196
A new I-V model for stress-induced leakage current including inelastic tunneling1999/01/0196
Characterization and optimization of infrared poly SiGe bolometers1999/04/0196
Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts1996/01/0196
An improved electron and hole mobility model for general purpose device simulation1997/01/0195
High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies1996/01/0195
Bias temperature instability in scaled p/sup +/ polysilicon gate p-MOSFET's1999/05/0195
Effective mass and mobility of holes in strained Si/sub 1-x/Ge/sub x/ layers on1992/01/0194
Fine-grained polysilicon films with built-in tensile strain1988/06/0194
Infrared focal plane array incorporating silicon IC process compatible bolometer1996/01/0194
High-mobility strained-Si PMOSFET's1996/01/0194
MOSFET electron inversion layer mobilities - a physically based semi-empirical model for a wide temperature range1989/08/0194
Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates2001/03/0193
Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers2001/01/0193
Wide intrascene dynamic range CMOS APS using dual sampling1997/01/0193
Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations2002/01/0193
A simple MOSFET model for circuit analysis1991/04/0193
Compact distributed RLC interconnect models-Part II: Coupled line transient expressions and peak crosstalk in multilevel networks2000/01/0192
Numerical simulation of a steady-state electron shock wave in a submicrometer semiconductor device1991/01/0192
Application of GaN-based heterojunction FETs for advanced wireless communication2001/03/0192
Consistent model for short-channel nMOSFET after hard gate oxide breakdown2002/03/0191