IEEE Transactions on Electron Devices

Title Publication Date Language Citations
Effect of interface states on electron transport in 4H-SiC inversion layers2001/01/0191
Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film1991/01/0191
Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light1999/01/0190
A unified simulation of Schottky and ohmic contacts2000/01/0190
Design and calibration of a microfabricated floating-element shear-stress sensor1988/06/0189
A model relating wearout to breakdown in thin oxides1994/01/0189
Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application2001/01/0189
Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs1993/01/0189
40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography2000/07/0188
A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects1999/06/0188
Promising storage capacitor structures with thin Ta/sub 2/O/sub 5/ film for low-power high-density DRAMs1990/01/0187
Electrical properties of heavily doped polycrystalline silicon-germanium films1994/01/0187
AlSb/InAs HEMT's for low-voltage, high-speed applications1998/01/0187
DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs1989/03/0187
Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma2001/01/0187
Low-frequency noise spectroscopy1994/01/0187
High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration2001/06/0186
Explaining the amplitude of RTS noise in submicrometer MOSFETs1992/01/0186
Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film1989/03/0186
Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs1990/03/0185
Thermal design studies of high-power heterojunction bipolar transistors1989/05/0185
A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure1988/04/0185
Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics2000/03/0184
DRAM technology perspective for gigabit era1998/03/0184
Effects of NH/sub 3/ plasma passivation on N-channel polycrystalline silicon thin-film transistors1997/01/0184
High-efficiency cadmium-free Cu(In,Ga)Se/sub 2/ thin-film solar cells with chemically deposited ZnS buffer layers1999/01/0184
High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method1993/01/0183
Optimization of the germanium preamorphization conditions for shallow-junction formation1988/05/0183
Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's1991/03/0183
Subthreshold slope in thin-film SOI MOSFETs1990/01/0183