IEEE Transactions on Electron Devices

Title Publication Date Language Citations
An insulator-lined silicon substrate-via technology with high aspect ratio2001/01/01109
The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors1990/01/01108
Lateral distribution of hot-carrier-induced interface traps in MOSFETs1988/01/01108
Technology and device scaling considerations for CMOS imagers1996/01/01107
Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomalies1988/03/01107
On the retention time distribution of dynamic random access memory (DRAM)1998/06/01106
A stochastic wire-length distribution for gigascale integration (GSI). II. Applications to clock frequency, power dissipation, and chip size estimation1998/03/01105
Physical models for degradation effects in polysilicon thin-film transistors1993/05/01104
Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films1994/01/01104
A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns2001/05/01104
Quantitative understanding of inversion-layer capacitance in Si MOSFET's1995/01/01104
Study of electrochemical etch-stop for high-precision thickness control of silicon membranes1989/04/01103
Double-gate CMOS: symmetrical- versus asymmetrical-gate devices2001/01/01103
Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor deposition at various pressures1992/03/01103
Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/1992/01/01102
Analysis of conduction in fully depleted SOI MOSFETs1989/03/01102
Silicon-on-Nothing (SON)-an innovative process for advanced CMOS2000/01/01102
A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects1999/01/01102
Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experiment1989/01/01102
MOS device modeling at 77 K1989/01/01101
Characterization of the MIC/MILC interface and its effects on the performance of MILC thin-film transistors2000/05/01101
An abuttable CCD imager for visible and X-ray focal plane arrays1991/05/01101
Sensitivity of CMOS based imagers and scaling perspectives2000/01/01101
Characterization of 23-percent efficient silicon solar cells1990/01/01100
High-quality oxide/nitride/oxide gate insulator for GaN MIS structures2001/03/01100
Characterization of random reactive ion etched-textured silicon solar cells2001/06/01100
Structure and properties of high efficiency ZnO/CdZnS/CuInGaSe/sub 2/ solar cells1990/01/01100
Kinetics of copper drift in low-κ polymer interlevel dielectrics1999/01/01100
Integrated fabrication of polysilicon mechanisms1988/06/01100
Partial filling of a quantum dot intermediate band for solar cells2001/01/0199