Japanese Journal of Applied Physics

Title Publication Date Language Citations
Physical reservoir computing—an introductory perspective2020/05/15161
Recent development of vertical GaN power devices2019/04/01118
The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system2019/05/1765
Recent advances and future prospects in energy harvesting technologies2020/10/2362
TiO2 Photocatalysis: A Historical Overview and Future Prospects2005/12/0162
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium2019/10/0459
Material science and device physics in SiC technology for high-voltage power devices2015/03/2358
GaN power devices: current status and future challenges2019/05/2856
Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process2020/01/2756
Spontaneous orientation polarization in organic light-emitting diodes2019/05/2456
Recent progress of Na-flux method for GaN crystal growth2019/05/2248
Review on ferroelectric/polar metals2020/05/2148
Alternate current poling and direct current poling for Pb(Mg1/3Nb2/3)O3–PbTiO3single crystals2019/09/1646
InGaN-based red light-emitting diodes: from traditional to micro-LEDs2021/12/1545
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth2016/11/1544
Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE2019/05/2243
A high throughput molecular screening for organic electronics via machine learning: present status and perspective2019/12/1043
Dielectric and piezoelectric properties of Pb[(Mg1/3Nb2/3)0.52(Yb1/2Nb1/2)0.15Ti0.33]O3 single-crystal rectangular plate and beam mode transducers poled by alternate current poling2019/08/2342
Emergent inductor by spiral magnets2019/11/2141
Assembly of van der Waals heterostructures: exfoliation, searching, and stacking of 2D materials2020/01/0141
Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm2019/05/1441
Phase transformation behavior of ultrathin Hf0.5Zr0.5O2 films investigated through wide range annealing experiments2019/03/0540
Characterization of crystalline defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth and halide vapor-phase epitaxy using synchrotron X-ray topography2019/04/1240
High-NA EUV lithography: current status and outlook for the future2022/04/2039
4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability2019/04/1639
Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability2019/05/2837
Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers2019/05/2236
Beyond silicene: synthesis of germanene, stanene and plumbene2020/04/2336
Advances in color-converted micro-LED arrays2020/10/1636
Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination2019/11/0635