Japanese Journal of Applied Physics

Title Publication Date Language Citations
Reservoir computing with dipole-coupled nanomagnets2019/06/1135
Effects of heat treatment and in situ high-temperature X-ray diffraction study on the formation of ferroelectric epitaxial Y-doped HfO2 film2019/02/2534
Current- and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes2019/05/0334
Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy2019/04/1634
GaN power IC technology on p-GaN gate HEMT platform2020/02/0434
Design and characterization of a low-optical-loss UV-C laser diode2020/08/1434
Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide2019/03/0133
A review on the latest progress of visible GaN-based VCSELs with lateral confinement by curved dielectric DBR reflector and boron ion implantation2019/05/3033
Review of plasma-based water treatment technologies for the decomposition of persistent organic compounds2020/10/1633
Turbostratic multilayer graphene synthesis on CVD graphene template toward improving electrical performance2019/06/1232
Effect of field cooling AC poling on electrical and physical properties for Pb(Mg1/3Nb2/3)O3-PbTiO3-based single crystals manufactured by a continuous-feeding Bridgman process2020/09/1532
Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices2019/11/0732
Octave-spanning broad luminescence of Cr3+, Cr4+-codoped Mg2SiO4 phosphor for ultra-wideband near-infrared LEDs2019/05/2432
Emerging applications using metal-oxide semiconductor thin-film devices2019/05/1331
Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)2019/03/0430
A possible origin of the large leakage current in ferroelectric Al1−x Sc x N films2021/02/2530
Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method2008/11/0130
Enhancement of epitaxial lateral overgrowth in the mist chemical vapor deposition ofα-Ga2O3by using a-plane sapphire substrate2019/11/2228
Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates2019/05/2028
Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices2018/11/0628
Relationship between cold plasma treatment-induced changes in radish seed germination and phytohormone balance2020/02/2628
Recent advances in reverse offset printing: an emerging process for high-resolution printed electronics2020/02/1028
Photoelectron Momentum Microscope at BL6U of UVSOR-III synchrotron2020/05/2128
Improved external quantum efficiency of 293 nm AlGaN UVB LED grown on an AlN template2018/11/2327
Enhanced electric property of relaxor ferroelectric crystals with low AC voltage high-temperature poling2020/09/1627
Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs2021/02/0326
Mass production of plasma activated water by an atmospheric pressure plasma2020/03/3026
Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method2019/05/2226
Electric field mediated large valley splitting in the van der Waals heterostructure WSe2/CrI32018/12/1225
Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures2019/05/2025