IEEE Electron Device Letters

Titel Veröffentlichungsdatum Sprache Zitate
Random telegraph noise of deep-submicrometer MOSFETs1990/02/01196
Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy1988/04/01196
Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes2001/12/01186
An analytical solution to a double-gate MOSFET with undoped body2000/05/01184
Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric2000/04/01180
High performance of high-voltage 4H-SiC Schottky barrier diodes1995/06/01180
Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs1993/12/01177
Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier1993/05/01174
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/2000/07/01170
High-temperature performance of AlGaN/GaN HFETs on SiC substrates1997/10/01165
Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype1999/05/01165
High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face1999/12/01162
The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film1990/02/01160
Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology2000/05/01159
New physics-based analytic approach to the thin-oxide breakdown statistics2001/06/01155
Trapping phenomena in avalanche photodiodes on nanosecond scale1991/12/01154
High-voltage double-implanted power MOSFET's in 6H-SiC1997/03/01154
Reduction of kink effect in thin-film SOI MOSFETs1988/02/01148
High-density MIM capacitors using Al2O3 and AlTiOx dielectrics2002/04/01145
Selective electroless copper for VLSI interconnection1989/09/01144
Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors1996/07/01142
Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics2001/05/01139
Room temperature operation of a quantum-dot flash memory1997/06/01137
A capacitor-less 1T-DRAM cell2002/02/01137
A new 'shift and ratio' method for MOSFET channel-length extraction1992/05/01134
On the mobility versus drain current relation for a nanoscale MOSFET2001/06/01134
Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V1997/06/01133
Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETs1989/07/01132
Dual work function metal gate CMOS technology using metal interdiffusion2001/09/01128
Dependence of electron channel mobility on Si-SiO/sub 2/ interface microroughness1991/12/01126