IEEE Electron Device Letters

Titel Veröffentlichungsdatum Sprache Zitate
Ohmic contacts to semiconducting diamond1988/07/0158
Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors1991/12/0158
Charge trapping and degradation in high-permittivity TiO2 dielectric films1997/10/0157
IrSi Schottky-barrier infrared detectors with 10- mu m cutoff wavelength1988/12/0157
A ferroelectric DRAM cell for high-density NVRAMs1990/10/0157
Improved hot-carrier immunity in submicrometer MOSFETs with reoxidized nitrided oxides prepared by rapid thermal processing1989/02/0157
Monolithic NMOS digital integrated circuits in 6H-SiC1994/11/0157
Scaling-parameter-dependent model for subthreshold swing S in double-gate SOI MOSFET's1994/11/0157
An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz1999/07/0157
The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors1991/02/0156
Boron diffusion and penetration in ultrathin oxide with poly-Si gate1998/08/0156
Very high temperature operation of diamond Schottky diode1997/11/0156
Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs1996/10/0156
Ultrathin oxide-nitride gate dielectric MOSFET's1998/04/0156
beta -SiC/Si heterojunction bipolar transistors with high current gain1988/02/0156
On the correlation between surface roughness and inversion layer mobility in Si-MOSFETs2000/01/0156
Nitridation of silicon-dioxide films grown on 6H silicon carbide1997/05/0156
Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET's2000/08/0155
Gate breakdown in MESFETs and HEMTs1991/10/0155
Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with a novel composite channels design1996/06/0155
Stack gate PZT/Al2O3 one transistor ferroelectric memory2001/07/0155
Dual work function metal gate CMOS transistors by Ni-Ti interdiffusion2002/04/0155
Graded-SiGe-base, poly-emitter heterojunction bipolar transistors1989/12/0155
High performance SONOS memory cells free of drain turn-on and over-erase: compatibility issue with current flash technology2000/08/0155
Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures1991/05/0155
Submicron transferred-substrate heterojunction bipolar transistors1999/08/0155
AlGaN/GaN HEMTs on (111) silicon substrates2002/01/0154
High-performance heat sinking for VLSI1981/05/0154
Characterization of channel hot electron injection by the subthreshold slope of NROM/sup TM/ device2001/11/0154
High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances1993/12/0154