IEEE Electron Device Letters

Titel Veröffentlichungsdatum Sprache Zitate
Highly Stable, Self-Aligned Coplanar a-InGaZnO TFTs With Oxide and Hydrogenated Amorphous Si Contacts2023/12/01
A High-Speed True Random Number Generator Based on Unified Selector-RRAM2023/12/01
Thermal Stability of the Avalanche-Like Breakdown Performance in Conjugated Polymer-Based Lateral Power Devices2023/12/01
IEEE Electron Device Letters Information for Authors2023/11/01
Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET With High Breakdown Voltage and Ultra-Low Interface State Density2023/12/01
3D Vertical Self-Rectifying Memristor Arrays With Split-Cell Structure, Large Nonlinearity (>104) and fJ-Level Switching Energy2023/12/01
Enhanced Total Ionizing Dose Response of 16 nm n-FinFETs With a Single Fin2023/12/01
Hybrid Source Laterally Diffused MOS Drain Engineering for ESD Robustness2023/12/01
Oxygen Vacancy Modulation With TiO₂ Stack Interface Engineering for Ferroelectric Hf0.5Zr0.5O₂ Thin Films2024/01/01
An Artificial Spiking Afferent Nerve Based on Synaptic Transistor for Thermal Perception2024/01/01
Ultra-Sensitive Narrow-Band P-Si Schottky Photodetector With Good Wavelength Selectivity and Low Driving Voltage2024/01/01
True Random Number Generation in Nonlinear Internal-Resonating MEMS Resonators2024/01/01
Antiferroelectric Negative Capacitance Transistor for Low Power Consumption2024/01/01
High-Performance 4H-SiC EUV Photodiode With Lateral p-n Junction Fabricated by Selective-Area Ion Implantation2024/05/01
Interstitial Alkali Metal Ions Regulating the Phase Distributions Enabling Efficient and Stable Red Perovskite Light-Emitting Diodes2024/05/01
IEEE Electron Device Letters Publication Information2024/04/01
Mode-Switchable Localized Surface Plasmon Resonator for W/D Dual-Band CMOS Oscillator2024/05/01
8F² Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-Diodes With 2 × 10⁵ Self-Rectifying Ratio2024/05/01
Low Dark Current HgCdTe Long Wavelength Infrared Photodiodes With Bandgap Gradient Multi-Layer Heterojunction2024/05/01
Table of Contents2024/04/01
Blank Page2024/04/01
2024 BCICTS Cal for Papers2024/04/01
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability2024/04/01
Manipulation of Synthetic Antiferromagnetic Skyrmion by Reduced Voltage via Design of Double Interface Structure2024/05/01
A MEMS-Type Ionization Vacuum Sensor With a Wide Measurement Range2024/05/01
2.5kV/3.78mΩ⋅cm² Low Forward Voltage Vertical β-Ga₂O₃ Schottky Rectifier With Field Plate Assisted Deep Mesa Termination2024/05/01
The Enhanced Polarization Switching Speed and Endurance in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers2024/05/01
Virtual-Body p-GaN Gate HEMT With Enhanced Ruggedness Against Hot-Electron-Induced Degradation2024/05/01
Understanding the Degeneration of Neurons From NbOx-Based Threshold Device by an Unhappy Environment2024/05/01
Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability2024/05/01