IEEE Transactions on Electron Devices

Titel Veröffentlichungsdatum Sprache Zitate
Submicron scaling of HBTs2001/01/0183
Single-electron logic device based on the binary decision diagram1997/07/0182
Measurement of high-field electron transport in silicon carbide2000/01/0182
Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors1991/01/0182
Super thin-film transistor with SOI CMOS performance formed by a novel grain enhancement method2000/01/0181
Photonic high-frequency capacitance-voltage characterization of interface states in metal-oxide-semiconductor capacitors2002/03/0181
SOI thermal impedance extraction methodology and its significance for circuit simulation2001/04/0181
1/f noise in CMOS transistors for analog applications2001/05/0180
A new aspect of mechanical stress effects in scaled MOS devices1991/04/0180
Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities1993/01/0180
Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz1999/01/0179
LWIR 128*128 GaAs/AlGaAs multiple quantum well hybrid focal plane array1991/05/0179
Random telegraph signals in deep submicron n-MOSFET's1994/07/0179
Polarity dependent gate tunneling currents in dual-gate CMOSFETs1998/01/0178
Modeling of SILC based on electron and hole tunneling. II. Steady-state2000/06/0178
Frequency-dependent electrical characteristics of GaAs MESFETs1990/05/0178
CMOS active pixel image sensor1994/03/0178
Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs1995/03/0177
Inversion layer mobility under high normal field in nitrided-oxide MOSFETs1990/01/0177
Impact of the vertical SOI 'DELTA' structure on planar device technology1991/06/0177
Analysis of the operation of GaAlAs/GaAs HBTs1989/01/0177
Physical subthreshold MOSFET modeling applied to viable design of deep-submicrometer fully depleted SOI low-voltage CMOS technology1995/01/0177
Piezoresistive characteristics of short-channel MOSFETs on (100) silicon2001/01/0176
Annealing behavior of a proton irradiated Al/sub x/Ga/sub 1-x/N/GaN high electron mobility transistor grown by MBE2000/01/0176
The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors1988/05/0176
Measurements and modeling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300 K1990/05/0175
A four-step method for de-embedding gigahertz on-wafer CMOS measurements2000/04/0175
Quantum-mechanical modeling of accumulation layers in MOS structure1992/07/0175
A novel MONOS nonvolatile memory device ensuring 10-year data retention after 10/sup 7/ erase/write cycles1993/01/0175
High efficiency and high concentration in photovoltaics1999/01/0175