Titel	Veröffentlichungsdatum	Sprache	Zitate
Wide-gap semiconductors for high-power electronics	1999/09/01	English	38
Modeling improvement of spectral response of solar cells by deployment of spectral converters containing semiconductor nanocrystals	2004/08/01	English	38
Green luminescence band of zinc oxide films copper-doped by thermal diffusion	2004/01/01	English	37
Anomalies in the low-temperature thermoelectric power of p-Bi2Te3 and Te associated with topological electronic transitions under pressure	1997/03/01	English	36
Ostwald ripening of quantum-dot nanostructures	2001/12/01	English	34
High-power laser diodes based on asymmetric separate-confinement heterostructures	2005/03/01	English	34
Thermodynamic Stability and Redistribution of Charges in Ternary AlGaN, InGaN, and InAlN Alloys	2005/01/01	English	33
Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs	2002/05/01	English	33
Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level	2001/04/01	English	32
Artificial GeSi substrates for heteroepitaxy: Achievements and problems	2003/05/01	English	31
Electron transfer between semiconductor quantum dots via laser-induced resonance transitions	2004/01/01	English	31
Induced photopleochroism in semiconductors Review	1999/05/01	English	31
Theory of threshold characteristics of semiconductor quantum dot lasers	2004/01/01	English	30
Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)	2002/11/01	English	30
Modification of Hg1−x CdxTe properties by low-energy ions	2003/10/01	English	29
Toward understanding the photoinduced changes in chalcogenide glasses	1998/08/01	English	29
Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled quantum dots	1997/10/01	English	28
Structural-phase transformations in SiOx films in the course of vacuum heat treatment	2003/01/01	English	28
Shallow p-n junctions formed in silicon using pulsed photon annealing	2002/05/01	English	28
Organic materials for photovoltaic and light-emitting devices	2003/07/01	English	28
The influence of deposition conditions and alloying on the electronic properties of amorphous selenium	2003/07/01	English	28
Fast exothermic processes in porous silicon	2005/08/01	English	28
Generation-recombination processes in semiconductors	2001/03/01	English	25
Exciton polaritons in long-period quantum-well structures	1998/01/01	English	25
Classification of electrical properties of porous silicon	2000/03/01	English	25
Transport and optical properties of tin δ-doped GaAs structures	1999/07/01	English	24
Basic principles of postgrowth annealing of CdTe:Cl ingot to obtain semi-insulating crystals	2000/11/01	English	24
D’yakonov-Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel	1999/05/01	English	24
One-dimensional photonic crystal obtained by vertical anisotropic etching of silicon	2002/08/01	English	24
High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates	2004/06/01	English	24