Semiconductor Science and Technology

Titel Veröffentlichungsdatum Sprache Zitate
Resonant acceptor bound magnetic polarons in Hg0.93Mn0.07Te1990/03/01
Characterisation of epitaxial CdTe/InSb heterostructures prepared by magnetron sputtering1990/03/01
An NMR and electrical assessment of heavy doping of indium antimonide via the neutron transmutation technique1988/11/01
Overhauser shift and dynamic nuclear polarisation in InSb observed by coherent spin-flip Raman scattering1990/03/01
Interband, intraband and spin-flip polarons in the zero-gap semiconductor Hg1-xMnxTe1990/03/01
Comment on 'Conduction mechanisms and temperature dependence of the electroluminescence in ZnO varistors'1988/03/01
Anomalous magneto-transport and optical transmission of PbTe thin films1990/03/01
Galvanomagnetic properties of single-crystal bismuth-antimony thin films1990/03/01
A wet solar cell with a p-CuxS/n-CdS junction photocathode1987/05/01
Shallow acceptor states in tellurium in high magnetic fields under hydrostatic pressure1989/04/01
A technique for the observation of interface trap densities in MOSFET devices1988/01/01
Characterisation under hydrostatic pressure of narrow-gap Hg1-xCdxTe and Hg1-xZnxTe1990/03/01
The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs2024/02/28
Understanding the effects of annealing induced structural transformations on the UVC absorbance and other optical properties of RF sputter deposited Ga2O3 thin films2024/03/04
TMD material investigation for a low hysteresis vdW NCFET logic transistor2024/02/28
Improved resistive switching characteristics of solution processed ZrO2/SnO2 bilayer RRAM via oxygen vacancy differential2024/03/08
Calculations of bound states in the valence band of AIAs/GaAs/AIAs and AIGaAs/GaAs/AIGaAs quantum wells1988/02/01
Specific heat study of Fe-based narrow- and wide-band diluted magnetic semiconductors1990/03/01
The electron ionisation rate in Ga1-xInxAsyP1-yalloys1988/05/01
Series addition of ballistic resistors1990/12/01
Electronic properties of spike-doped InSb1990/03/01
Effects of residual Shockley-Read traps on the efficiency of Auger-suppressed IR detector diodes1990/03/01
Pressure dependence of intra-ionic transitions of Mn2+for the semimagnetic semiconductor Cd1-xMnxSe and Zn0.7Mn0.3Se under different temperatures1989/04/01
LRP equipment characterisation at low temperatures and application to polysilicon bipolar emitter processing1990/07/01
Band-trap transitions and ballistic electrons in SiO21989/07/01
Piezo-phototronic enhanced dual-wavelength InGaN/GaN multiple quantum wells Micro-LED arrays2023/10/05
MISHEMT intrinsic voltage gain under multiple channel output characteristics2023/09/22
Analysis of surface morphology at leakage current sources on large-area GaN-based p-i-n diodes2023/08/24
Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO2/HfO2 stacked dielectric2023/09/14
Non-ideal program-time conservation in charge trap flash for deep learning2023/09/06