| A review of recent theoretical developments in the understanding of the migration of helium in metals and its interaction with lattice defects | 1977/01/01 | English | 126 |
| Sputtering models—A synoptic view | 1983/01/01 | English | 126 |
| Theoretical studies on an empirical formula for sputtering yield at normal incidence | 1983/01/01 | English | 123 |
| Sputtering-yield studies on silicon and silver targets | 1973/01/01 | English | 119 |
| A rapid reading technique for nuclear particle damage tracks in thin foils | 1970/01/01 | English | 115 |
| On the energy distribution of sputtered dimers | 1974/01/01 | English | 115 |
| Energy spikes in Si and Ge due to heavy ion bombardment | 1978/01/01 | English | 113 |
| Ion-induced silicide formation in niobium thin films | 1979/01/01 | English | 109 |
| Amorphous phase formation in irradiated intermetallic compounds | 1983/01/01 | English | 108 |
| Sputtering and backscattering of keV light ions bombarding random targets | 1973/01/01 | English | 107 |
| The aluminum centers in α-quartz | 1975/01/01 | English | 107 |
| Ranges and range theories | 1980/01/01 | English | 106 |
| Water radiolysis and its effect upon in-reactor zircaloy corrosion | 1976/01/01 | English | 105 |
| Spatial distribution of energy deposited into atomic processes in ion-implanted silicon | 1970/01/01 | English | 105 |
| Frenkel pair creation and stage I recovery in W crystals irradiated near threshold | 1978/01/01 | English | 102 |
| Blistering of molybdenum under helium ion bombardment | 1973/01/01 | English | 101 |
| Computer modelling of barium titanate | 1983/01/01 | English | 101 |
| Energy distributions of atoms sputtered from alkali halides by 540 eV electrons | 1978/01/01 | English | 98 |
| On the reflection coefficient of keV heavy-ion beams from solid targets | 1971/11/01 | English | 97 |
| A modified lattice potential model of electronically mediated sputtering | 1985/01/01 | English | 95 |
| Clusters sputtered from tungsten | 1972/03/01 | English | 94 |
| The use of channeling-effect techniques to locate interstitial foreign atoms in silicon | 1971/01/01 | English | 93 |
| Nucleation of damage centres during ion implantation of silicon | 1971/03/01 | English | 92 |
| Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge | 1977/01/01 | English | 91 |
| Disorder production and amorphisation in ion implanted silicon | 1980/01/01 | English | 91 |
| Some new aspects for the evaluation of disorder profiles in silicon by backscattering | 1973/01/01 | English | 89 |
| Voids in irradiated metals (Part II) | 1972/07/01 | English | 88 |
| Analytical modelling of sputter induced surface morphology | 1977/01/01 | English | 88 |
| Concentration profiles of boron implantations in amorphous and polycrystalline silicon | 1975/01/01 | English | 88 |
| Recovery of low temperature electron irradiation-induced damage inn-type gaas | 1970/01/01 | English | 88 |