| Principles and applications of ion-induced auger electron emission from solids | 1982/01/01 | English | 48 |
| Bombardment induced surface damage in a nickel single crystal observed by ion scattering and leed | 1973/01/01 | English | 47 |
| Ion bombardment effects in polymers | 1986/09/01 | English | 47 |
| Microstructural analysis of neutron irradiated titanium and rhenium | 1971/06/01 | English | 47 |
| Delayed neutron data from tristan | 1986/03/01 | English | 47 |
| Multiple scattering of channeled ions in crystals | 1972/03/01 | English | 47 |
| Electron irradiation damage in quartz | 1974/01/01 | English | 47 |
| Energy spike generation and quenching processesin ion bombardment induced amorphizationof solids | 1978/01/01 | English | 47 |
| The theory of recoil implantation | 1969/01/01 | English | 47 |
| Formation of cones during sputtering | 1976/01/01 | English | 47 |
| Ejection of fast recoils under ion bombardment of crystals | 1980/01/01 | English | 47 |
| A necessary condition for the appearance of damage-induced surface-topography during particle bombardment | 1973/01/01 | English | 47 |
| Ionization, thermal, and flux dependences of implantation disorder in silicon | 1971/12/01 | English | 46 |
| Charge-changing collisions of channeled oxygen ions in gold | 1972/02/01 | English | 46 |
| Effects of60Co gamma-ray irradiation on the optical properties of natural and synthetic quartz from 85 to 300 K | 1975/01/01 | English | 46 |
| Depth distributions of implanted atoms under the influence of surface erosion and diffusion | 1973/01/01 | English | 45 |
| Theoretical assessments of major physical processes involved in the depth resolution in sputter profiling | 1982/01/01 | English | 45 |
| Computer simulation of single-crystal and polycrystal sputtering. II | 1984/01/01 | English | 45 |
| Computer-simulated energy and angular distributions of sputtered Cu atoms | 1985/01/01 | English | 45 |
| Preferential sputtering of binary alloys with diffusion: The equilibrium distribution | 1978/01/01 | English | 44 |
| Stage III activation energy in Ni | 1981/01/01 | English | 44 |
| Self-radiation damage ingrowth in238PuO2 | 1973/01/01 | English | 44 |
| Helium implantation effects in palladium at high doses | 1973/01/01 | English | 44 |
| Electrical and structural characterization of implantation doped silicon by infrared reflection | 1982/01/01 | English | 43 |
| Anisotropy of the displacement energy in single crystals of molybdenum | 1975/01/01 | English | 43 |
| Changes in the chemical stability of ion-implanted silica glass | 1976/01/01 | English | 43 |
| Observations of a fcc helium gas-bubble superlattice in copper, nickel, and stainless steel | 1980/01/01 | English | 43 |
| Reflection of light ions from solid surfaces | 1973/01/01 | English | 43 |
| Void formation in irradiated Nickel 270 | 1971/03/01 | English | 43 |
| Low temperature channeling measurements of ion implantation lattice disorder in GaAs† | 1971/05/01 | English | 42 |