| Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon films | Journal of Applied Physics |
- Science: Chemistry: Physical and theoretical chemistry
- Science: Physics
- Technology: Chemical technology
- Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
- Science: Physics
| 72 | 1989 |
| Analysis of solid phase crystallization in amorphized polycrystalline Si films on quartz substrates | Journal of Applied Physics |
- Science: Chemistry: Physical and theoretical chemistry
- Science: Physics
- Technology: Chemical technology
- Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
- Science: Physics
| 48 | 1989 |
| Mode of growth and microstructure of polycrystalline silicon obtained by solid-phase crystallization of an amorphous silicon film | Journal of Applied Physics |
- Science: Chemistry: Physical and theoretical chemistry
- Science: Physics
- Technology: Chemical technology
- Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
- Science: Physics
| 125 | 1994 |
| 10.1109/TED.2002.804702 | | | | |
| Poly-Si thin-film transistors on steel substrates | IEEE Electron Device Letters |
- Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
- Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
- Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
| 34 | 2000 |
