Microstructure Development and Stacking Fault Annihilation in β-SiC Powder Compact

Article Properties
  • Language
    English
  • Publication Date
    1991/01/01
  • Indian UGC (journal)
  • Citations
    33
  • Won-Seon SEO Department of Industrial Chemistry, Faculty of Engineering, The university of Tokyo
  • Chul-Hoon PAI Department of Industrial Chemistry, Faculty of Engineering, The university of Tokyo
  • Kunihito KOUMOTO Department of Industrial Chemistry, Faculty of Engineering, The university of Tokyo
  • Hiroaki YANAGIDA Research Center for Advanced Science and Technology, The University of Tokyo
Cite
SEO, Won-Seon, et al. “Microstructure Development and Stacking Fault Annihilation in β-SiC Powder Compact”. Journal of the Ceramic Society of Japan, vol. 99, no. 1150, 1991, pp. 443-7, https://doi.org/10.2109/jcersj.99.443.
SEO, W.-S., PAI, C.-H., KOUMOTO, K., & YANAGIDA, H. (1991). Microstructure Development and Stacking Fault Annihilation in β-SiC Powder Compact. Journal of the Ceramic Society of Japan, 99(1150), 443-447. https://doi.org/10.2109/jcersj.99.443
SEO WS, PAI CH, KOUMOTO K, YANAGIDA H. Microstructure Development and Stacking Fault Annihilation in β-SiC Powder Compact. Journal of the Ceramic Society of Japan. 1991;99(1150):443-7.
Citations
Title Journal Journal Categories Citations Publication Date
Structure and defect analysis of different polysilazane‐derived silicon carbide systems

Journal of the American Ceramic Society
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology: Clay industries. Ceramics. Glass
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
2024
Microstructure evolutions of SiC whiskers at high temperature and its effects on silicon carbide ceramics Ceramics International
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology: Clay industries. Ceramics. Glass
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
3 2023
High-Yield Synthesis of SiC@SiO2 Core–Shell Nanowires on Graphite Substrates for Energy Applications ACS Sustainable Chemistry & Engineering
  • Science: Chemistry: General. Including alchemy
  • Technology: Mechanical engineering and machinery: Renewable energy sources
  • Technology: Chemical technology: Chemical engineering
  • Technology: Chemical technology: Chemical engineering
  • Science: Chemistry
2023
X-ray characterization of anisotropic defect formation in SiC under irradiation with applied stress Scripta Materialia
  • Technology: Chemical technology
  • Science: Chemistry
  • Technology: Mining engineering. Metallurgy
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
7 2021
Intrinsic microstructures of silica‐bonded porous nano‐SiC ceramics

Journal of the American Ceramic Society
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology: Clay industries. Ceramics. Glass
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
7 2020
Citations Analysis
The category Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 26 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Reaction Sintering of Polycarbosilane‐Impregnated Compact of Silicon Carbide Hollow Particles and the Resultant Thermoelectric Properties and was published in 1991. The most recent citation comes from a 2024 study titled Structure and defect analysis of different polysilazane‐derived silicon carbide systems. This article reached its peak citation in 2019, with 3 citations. It has been cited in 22 different journals. Among related journals, the Journal of the American Ceramic Society cited this research the most, with 8 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year