Silicon carbide LED

Article Properties
Cite
Vlaskina, S.I. “Silicon Carbide LED”. Semiconductor Physics, Quantum Electronics and Optoelectronics, vol. 5, no. 1, 2002, pp. 71-75, https://doi.org/10.15407/spqeo5.01.071.
Vlaskina, S. (2002). Silicon carbide LED. Semiconductor Physics, Quantum Electronics and Optoelectronics, 5(1), 71-75. https://doi.org/10.15407/spqeo5.01.071
Vlaskina S. Silicon carbide LED. Semiconductor Physics, Quantum Electronics and Optoelectronics. 2002;5(1):71-5.
Journal Category
Science
Physics
Refrences
Title Journal Journal Categories Citations Publication Date
2. M.A.Capano, R.Santhakumar, J.A.Cooper,Ir., and M.R.Meloch, SiC Ion Implantation Research at Purdue, USA(internet information), 2002.
1. S.I.Vlaskina, K.W.Kim, Y.S.Kim, Y.P.Lee, G.S.Svechnikov, Optoelectronics Devices on Silicon Carbide // Journal of the Korean Physical Society, 30(1),pp.117-121(1997).
Citations
Title Journal Journal Categories Citations Publication Date
Achievements and prospects: 25 years of SPQEO journal

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  • Science: Physics
  • Science: Physics
2023
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  • Science: Physics: Optics. Light
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
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Introducing a new atomic parameter of energy scale for wideband semiconductors and binary materials SN Applied Sciences
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  • Technology: Mechanical engineering and machinery
  • Technology: Mechanical engineering and machinery
  • Technology: Engineering (General). Civil engineering (General)
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XPS, UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP) Applied Surface Science
  • Science: Chemistry: Physical and theoretical chemistry
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
  • Science: Physics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
85 2014
Citations Analysis
The category Science: Physics 7 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(100) by modeling and simulation and was published in 2004. The most recent citation comes from a 2023 study titled Achievements and prospects: 25 years of SPQEO journal. This article reached its peak citation in 2014, with 2 citations. It has been cited in 10 different journals, 20% of which are open access. Among related journals, the Semiconductor Physics, Quantum Electronics and Optoelectronics cited this research the most, with 2 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year