Infrared detectors: outlook and means

Article Properties
Cite
Sizov, F. F. “Infrared Detectors: Outlook and Means”. Semiconductor Physics, Quantum Electronics and Optoelectronics, vol. 3, no. 1, 2000, pp. 52-58, https://doi.org/10.15407/spqeo3.01.052.
Sizov, F. F. (2000). Infrared detectors: outlook and means. Semiconductor Physics, Quantum Electronics and Optoelectronics, 3(1), 52-58. https://doi.org/10.15407/spqeo3.01.052
Sizov FF. Infrared detectors: outlook and means. Semiconductor Physics, Quantum Electronics and Optoelectronics. 2000;3(1):52-8.
Journal Category
Science
Physics
Refrences
Title Journal Journal Categories Citations Publication Date
A monolithically integrated InGaAs-InP p-i-n/JFET focal plane array IEEE Photonics Technology Letters
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Science: Physics: Optics. Light
  • Science: Physics
  • Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics
  • Science: Physics: Acoustics. Sound
  • Science: Physics: Optics. Light
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 5 1996
10.1142/3291
10.1117/12.218282
10.1117/12.354568
Currents in narrow-gap photodiodes Semiconductor Science and Technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Science: Chemistry
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 16 1999
Citations
Title Journal Journal Categories Citations Publication Date
Investigation of Temperature-Dependent Mechanism of TCR in a-Si:H for Microbolometer Applications IEEE Sensors Journal
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Science: Mathematics: Instruments and machines
  • Science: Physics
  • Technology: Engineering (General). Civil engineering (General)
 2024
Achievements and prospects: 25 years of SPQEO journal

 Semiconductor Physics, Quantum Electronics and Optoelectronics
  • Science: Physics
  • Science: Physics
 2023
The silicon model photonic structure for a full-function thermal photodetector

 Semiconductor Physics, Quantum Electronics and Optoelectronics
  • Science: Physics
  • Science: Physics
 2022
Review of Infrared signature suppression systems using optical blocking method Defence Technology 37 2019
Study on the Temperature Dependency Effect of Thermal Coefficient of Resistance in Amorphous Silicon for Uncooled Microbolometer Application MRS Advances
  • Science: Chemistry
 2019
Citations Analysis
Category Category Repetition
Science: Physics7
Technology: Chemical technology5
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials5
Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks3
Science: Chemistry3
Technology: Motor vehicles. Aeronautics. Astronautics3
Science3
Technology: Engineering (General). Civil engineering (General)3
Science: Physics: Optics. Light2
Science: Mathematics: Instruments and machines1
Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics1
Science: Physics: Acoustics. Sound1
Agriculture1
Agriculture: Agriculture (General)1
Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics1
The category Science: Physics 7 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Charge transport in HgCdTe-based n +-p photodiodes and was published in 2001. The most recent citation comes from a 2024 study titled Investigation of Temperature-Dependent Mechanism of TCR in a-Si:H for Microbolometer Applications. This article reached its peak citation in 2019, with 2 citations. It has been cited in 12 different journals, 8% of which are open access. Among related journals, the Semiconductor Physics, Quantum Electronics and Optoelectronics cited this research the most, with 2 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year