Silicon carbide defects and luminescence centers in current heated 6H-SiC
Article Properties
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DOI (url)
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Publication Date2009/12/04
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Indian UGC (journal)
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Refrences22
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Citations9
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S. W. Lee
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Cite
Lee, S. W. “Silicon Carbide Defects and Luminescence Centers in Current Heated 6H-SiC”. Semiconductor Physics, Quantum Electronics and Optoelectronics, vol. 13, no. 1, 2009, pp. 024-9, https://doi.org/10.15407/spqeo13.01.024.
Lee, S. W. (2009). Silicon carbide defects and luminescence centers in current heated 6H-SiC. Semiconductor Physics, Quantum Electronics and Optoelectronics, 13(1), 024-029. https://doi.org/10.15407/spqeo13.01.024
Lee SW. Silicon carbide defects and luminescence centers in current heated 6H-SiC. Semiconductor Physics, Quantum Electronics and Optoelectronics. 2009;13(1):024-9.
Journal Category
Science
Physics
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Observation of the D-center in 6H-SiC p-n diodes grown by chemical vapor deposition | Applied Physics Letters |
| 33 | 1994 |
| 10.1103/PhysRevB.22.2842 | ||||
| 10.1002/1521-396X(199707)162:1<5::AID-PSSA5>3.3.CO;2-A | ||||
| 10.4028/www.scientific.net/MSF.556-557.65 | ||||
| 10.1007/BF00324007 |
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Neutrons and swift heavy ions irradiation induced damage in SiC single crystal | Materials Today Communications | 2023 | ||
Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications - Part I Thermal and Plasma CVD | ECS Journal of Solid State Science and Technology |
| 3 | 2023 |
| Structural transformations in femtosecond laser-processed n-type 4H-SiC | Applied Surface Science |
| 34 | 2016 |
Nanostructures in silicon carbide crystals and films | International Journal of Modern Physics B |
| 2016 | |
| External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| 3 | 2015 |
Citations Analysis
The category
Science: Physics 7
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions and was published in 2013. The most recent citation comes from a 2023 study titled Neutrons and swift heavy ions irradiation induced damage in SiC single crystal. This article reached its peak citation in 2023, with 2 citations. It has been cited in 6 different journals, 16% of which are open access. Among related journals, the Semiconductor Physics, Quantum Electronics and Optoelectronics cited this research the most, with 4 citations. The chart below illustrates the annual citation trends for this article.