Localized Electronic States in Bombarded Semiconductors

Article Properties
Cite
James, Hubert M., and Karl Lark-Horovitz. “Localized Electronic States in Bombarded Semiconductors”. Zeitschrift für Physikalische Chemie, vol. 198, no. 1, 1951, pp. 107-26, https://doi.org/10.1515/zpch-1951-19811.
James, H. M., & Lark-Horovitz, K. (1951). Localized Electronic States in Bombarded Semiconductors. Zeitschrift für Physikalische Chemie, 198(1), 107-126. https://doi.org/10.1515/zpch-1951-19811
James, Hubert M., and Karl Lark-Horovitz. “Localized Electronic States in Bombarded Semiconductors”. Zeitschrift für Physikalische Chemie 198, no. 1 (1951): 107-26. https://doi.org/10.1515/zpch-1951-19811.
James HM, Lark-Horovitz K. Localized Electronic States in Bombarded Semiconductors. Zeitschrift für Physikalische Chemie. 1951;198(1):107-26.
Journal Categories
Science
Chemistry
Science
Chemistry
Physical and theoretical chemistry
You May Also Like
Citations
Title Journal Journal Categories Citations Publication Date
On Separation of Charges and Formation of Linear Structures in the Nuclei of Dislocations in Metals Applied Mathematics 2 2020
Particle interaction and displacement damage in silicon devices operated in radiation environments Reports on Progress in Physics
  • Science: Physics
  • Science: Physics
 4 2007
Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles Semiconductors
  • Technology: Chemical technology
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 52 2001
Radiation damage in silicon detectors La Rivista del Nuovo Cimento
  • Science: Physics
  • Science: Physics
 1 1994
Radiation damage in Ge and Si detected by carrier lifetime changes: Damage thresholds Solar Cells 1990
Citations Analysis
Category Category Repetition
Science: Physics13
Technology: Chemical technology11
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials11
Technology: Electrical engineering. Electronics. Nuclear engineering: Nuclear engineering. Atomic power3
Science: Physics: Atomic physics. Constitution and properties of matter2
Science: Chemistry2
Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks2
Technology: Electrical engineering. Electronics. Nuclear engineering2
Science: Mathematics: Instruments and machines1
Science: Physics: Nuclear and particle physics. Atomic energy. Radioactivity1
Science: Chemistry: Analytical chemistry1
Science: Science (General)1
Science: Chemistry: Physical and theoretical chemistry1
The category Science: Physics 13 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Vacancies and interstitials in germanium and silicon and was published in 1956. The most recent citation comes from a 2020 study titled On Separation of Charges and Formation of Linear Structures in the Nuclei of Dislocations in Metals. This article reached its peak citation in 1971, with 2 citations. It has been cited in 17 different journals. Among related journals, the physica status solidi (b) cited this research the most, with 7 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year