Emission characteristics improvement in structures with InAs/GaAsN/InGaAsN superlattices
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2009/04/01
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Journal
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Indian UGC (journal)
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Refrences20
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V. V. Mamutin
Journal Categories
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
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Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires | Nano Letters |
| 125 | 2006 |
| Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors | Nature Materials |
| 554 | 2006 |
| О равномерной аппроксимации $n$-аналитическими функциями на замкнутых множествах в $\mathbb C$ | Известия Российской академии наук. Серия математическая | 11 | 2004 | |
Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer | Applied Physics Letters |
| 39 | 2003 |
Parametric study of Ga1−xInxNyAs1−y/GaAs quantum wells for 1.3-μm laser operation | Applied Physics Letters |
| 9 | 2003 |
Refrences Analysis
The category
Science: Physics 9
is the most frequently represented among the references in this article. It primarily includes studies from Applied Physics Letters and Journal of Crystal Growth. The chart below illustrates the number of referenced publications per year.