Electric Field Effect in Atomically Thin Carbon Films

Article Properties
  • Language
    English
  • DOI (url)
    10.1126/science.1102896
  • Publication Date
    2004/10/22
  • Journal
    Science
  • Indian UGC (journal)
  • Refrences
    20
  • Citations
    50,659
  • K. S. Novoselov Department of Physics, University of Manchester, Manchester M13 9PL, UK.Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.
  • A. K. Geim Department of Physics, University of Manchester, Manchester M13 9PL, UK.Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.
  • S. V. Morozov Department of Physics, University of Manchester, Manchester M13 9PL, UK.Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.
  • D. Jiang Department of Physics, University of Manchester, Manchester M13 9PL, UK.Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.
  • Y. Zhang Department of Physics, University of Manchester, Manchester M13 9PL, UK.Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.
  • S. V. Dubonos Department of Physics, University of Manchester, Manchester M13 9PL, UK.Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.
  • I. V. Grigorieva Department of Physics, University of Manchester, Manchester M13 9PL, UK.Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.
  • A. A. Firsov Department of Physics, University of Manchester, Manchester M13 9PL, UK.Institute for Microelectronics Technology, 142432 Chernogolovka, Russia.
Abstract
Refrences
Title Publication year
10.1063/1.17107172004
10.1088/1367-2630/5/1/1382003
M. R. Stan, P. D. Franzon, S. C. Goldstein, J. C. Lach, M. M. Zeigler, Proc. IEEE91, 1940 (2003).2003
10.1080/104084302085004972002
10.1088/0953-8984/14/36/1022002
10.1147/rd.451.00112001
10.1063/1.14073062001
10.1023/A:10109079287092001
10.1016/S0009-2614(01)01066-12001
10.1063/1.12881662000
10.1016/0039-6028(92)90183-71992
I. L. Spain, in Chemistry and Physics of Carbon, P. L. Walker, P. A. Thrower, Eds. (Dekker, New York, 1981), pp. 119–304.1981
10.1126/science.1060928
10.1080/00018730110113644
10.1038/41284
Other methods of preparing thin graphitic layers exist. The closest analogs of FLG are nanometer-sized patches of graphene on top of pyrolytic graphite ( 12 13 ) carbon films grown on single-crystal metal substrates ( 14 ) and mesoscopic graphitic disks with thickness down to ∼60 graphene layers ( 8 9 ).
See supporting data on Science Online.
10.1126/science.287.5453.622
We believe that our thinnest FLG samples (as in Fig. 2A) are in fact zero-gap semiconductors because small nonzero values of δϵ found experimentally can be attributed to inhomogeneous doping which smears the zero-gap state over a small range of V g and leads to finite apparent δϵ.
Supported by the UK Engineering and Physical Sciences Research Council and the Russian Academy of Sciences (S.V.M. S.V.D.). We thank L. Eaves E. Hill and O. Shklyarevskii for discussions and interest.