Repetitive High-Power Microwave Pulses Induced Failure on a GaAs HBT LNA

Article Properties
  • DOI (url)
    10.1109/tps.2023.3237850
  • Publication Date
    2023/02/01
  • Journal
    IEEE Transactions on Plasma Science
  • Indian UGC (journal)
  • Refrences
    26
  • Qidong Mao National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan, China ORCID (unauthenticated)
  • Liyang Huang National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan, China ORCID (unauthenticated)
  • Zhongwu Xiang National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan, China ORCID (unauthenticated)
  • Jin Meng National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan, China ORCID (unauthenticated)
Journal Categories
Science
Physics
Science
Physics
Electricity and magnetism
Electricity
Plasma physics
Ionized gases
Refrences
Title Journal Journal Categories Citations Publication Date
Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method IEEE Access
  • Technology: Electrical engineering. Electronics. Nuclear engineering
  • Science: Science (General): Cybernetics: Information theory
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Telecommunication
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
 1 2019
Characterization and modeling of bias dependent breakdown and self-heating in GaInP/GaAs power HBT to improve high power amplifier design IEEE Transactions on Microwave Theory and Techniques
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
 1 2002
The impact of laser energy, bias and irradiation positions on single event transients of InP HBT Journal of Physics D: Applied Physics
  • Science: Chemistry: Physical and theoretical chemistry
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 3 2020
10.1109/ssd52085.2021.9429357
10.1109/asicon.2017.8252619