Electromagnetic Pulse Induced Failure Analysis of GaN HEMT Based Power Amplifier

Article Properties

• DOI (url)

  10.1109/tpel.2023.3315726
• Publication Date

  2024/01/01
• Journal

  IEEE Transactions on Power Electronics
• Indian UGC (journal)
• Refrences

  37
• Lei Wang Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, China
• Changchun Chai Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, China
• Tian-Long Zhao Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, China ORCID (unauthenticated)
• Feng Wei School of Electrical Engineering, Xidian University, Xi'an, China ORCID (unauthenticated)
• Wei-Shen Liu School of Electrical Engineering, Xidian University, Xi'an, China
• Yutian Wang Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, China
• Zhao Li School of Electrical Engineering, Xidian University, Xi'an, China
• Le Xu School of Electrical Engineering, Xidian University, Xi'an, China ORCID (unauthenticated)
• Fuxing Li Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, China
• Yintang Yang Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, China