N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz

Article Properties
  • Publication Date
    2024/03/01
  • Indian UGC (journal)
  • Refrences
    13
  • Henry Collins Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA ORCID (unauthenticated)
  • Emre Akso Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA ORCID (unauthenticated)
  • Nirupam Hatui Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA
  • Christopher J. Clymore Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA
  • Christian Wurm Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA
  • Robert Hamwey Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA ORCID (unauthenticated)
  • Matthew Guidry Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA ORCID (unauthenticated)
  • Stacia Keller Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA ORCID (unauthenticated)
  • Umesh K. Mishra Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, CA, USA ORCID (unauthenticated)
Cite
Collins, Henry, et al. “N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz”. IEEE Microwave and Wireless Technology Letters, vol. 34, no. 3, 2024, pp. 287-90, https://doi.org/10.1109/lmwt.2024.3352612.
Collins, H., Akso, E., Hatui, N., Clymore, C. J., Wurm, C., Hamwey, R., Guidry, M., Keller, S., & Mishra, U. K. (2024). N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz. IEEE Microwave and Wireless Technology Letters, 34(3), 287-290. https://doi.org/10.1109/lmwt.2024.3352612
Collins H, Akso E, Hatui N, Clymore CJ, Wurm C, Hamwey R, et al. N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz. IEEE Microwave and Wireless Technology Letters. 2024;34(3):287-90.
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Refrences
Title Journal Journal Categories Citations Publication Date
Design, fabrication and characterization of highly linear N-polar GaN MIS-HEMT for mm-wave receiver applications 2020
Behavior and mechanism of step bunching during metalorganic vapor phase epitaxy of GaAs

Applied Physics Letters
  • Science: Chemistry: Physical and theoretical chemistry
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
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