Title | Journal | Journal Categories | Citations | Publication Date |
---|---|---|---|---|
Design, fabrication and characterization of highly linear N-polar GaN MIS-HEMT for mm-wave receiver applications | 2020 | |||
Behavior and mechanism of step bunching during metalorganic vapor phase epitaxy of GaAs | Applied Physics Letters |
| 62 | 1995 |
10.1109/drc50226.2020.9135169 | ||||
10.1109/ims30576.2020.9223775 | ||||
10.1109/ims37962.2022.9865510 |