Improving the RF Performance of InP DHBT Using fT-Doubler Technique

Article Properties
  • DOI (url)
    10.1109/lmwt.2023.3319813
  • Publication Date
    2023/12/01
  • Journal
    IEEE Microwave and Wireless Technology Letters
  • Indian UGC (journal)
  • Refrences
    14
  • Zhaochen Zhu High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China ORCID (unauthenticated)
  • Wuchang Ding High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China ORCID (unauthenticated)
  • Yanzhe Wang High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China ORCID (unauthenticated)
  • Jianjun Ding High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
  • Fugui Zhou High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
  • Yongbo Su High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China ORCID (unauthenticated)
  • Feng Yang High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
  • Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China ORCID (unauthenticated)
Cite
Zhu, Zhaochen, et al. “Improving the RF Performance of InP DHBT Using FT-Doubler Technique”. IEEE Microwave and Wireless Technology Letters, vol. 33, no. 12, 2023, pp. 1615-8, https://doi.org/10.1109/lmwt.2023.3319813.
Zhu, Z., Ding, W., Wang, Y., Ding, J., Zhou, F., Su, Y., Yang, F., & Jin, Z. (2023). Improving the RF Performance of InP DHBT Using fT-Doubler Technique. IEEE Microwave and Wireless Technology Letters, 33(12), 1615-1618. https://doi.org/10.1109/lmwt.2023.3319813
Zhu Z, Ding W, Wang Y, Ding J, Zhou F, Su Y, et al. Improving the RF Performance of InP DHBT Using fT-Doubler Technique. IEEE Microwave and Wireless Technology Letters. 2023;33(12):1615-8.
Journal Categories
Technology
Electrical engineering
Electronics
Nuclear engineering
Electric apparatus and materials
Electric circuits
Electric networks
Technology
Electrical engineering
Electronics
Nuclear engineering
Electronics
Technology
Engineering (General)
Civil engineering (General)
Refrences
Title Journal Journal Categories Citations Publication Date
A 35-GHz Bandwidth 30 GSa/s InP Track-and-Hold Amplifier Using Enhanced f T -Doubler Technique IEEE Transactions on Circuits and Systems II: Express Briefs
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
  • Technology: Engineering (General). Civil engineering (General)
 4 2022
Realization of a broadband hybrid X-band power amplifier based on f-doubler technique AEU - International Journal of Electronics and Communications
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Telecommunication
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Telecommunication
  • Technology: Technology (General): Industrial engineering. Management engineering: Information technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Telecommunication
  • Science: Mathematics: Instruments and machines: Electronic computers. Computer science
 8 2019
10.1109/ims19712.2021.9574968
Investigation of f T-Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs IEEE Microwave and Wireless Components Letters
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
  • Technology: Engineering (General). Civil engineering (General)
 1 2020
10.1109/smic.2008.19