A 10–100-GHz Wideband Amplifier With Low-Impedance Coupled Lines in SiGe BiCMOS

Article Properties

• DOI (url)

  10.1109/lmwt.2023.3288114
• Publication Date

  2023/09/01
• Journal

  IEEE Microwave and Wireless Technology Letters
• Indian UGC (journal)
• Refrences

  13
• Doyoon Kim School of Electrical Engineering, Korea University, Seoul, South Korea ORCID (unauthenticated)
• Heekang Son School of Electrical Engineering, Korea University, Seoul, South Korea ORCID (unauthenticated)
• Jungsoo Kim Electronics and Telecommunications Research Institute (ETRI), Daejeon, South Korea ORCID (unauthenticated)
• Jaeman Lee School of Electrical Engineering, Korea University, Seoul, South Korea ORCID (unauthenticated)
• Yan Zhao Department of Electrical and Computer Engineering, University of California at Los Angeles (UCLA), Los Angeles, CA, USA
• Richard Al Hadi Department of Electrical Engineering, University of California at Los Angeles (UCLA), Los Angeles, CA, USA ORCID (unauthenticated)
• Mehmet Kaynak IHP, Frankfurt (Oder), Germany
• Mau-Chung Frank Chang Department of Electrical Engineering, University of California at Los Angeles (UCLA), Los Angeles, CA, USA ORCID (unauthenticated)
• Jae-Sung Rieh School of Electrical Engineering, Korea University, Seoul, South Korea ORCID (unauthenticated)