AkankshaBhutani Institute of Radio Frequency Engineering and Electronics, Karlsruhe Institute of Technology, Karlsruhe, Germany ORCID (unauthenticated)
MehmetKaynak IHP Technology, Frankfurt, Germany
ElizabethBekker Institute of Radio Frequency Engineering and Electronics, Karlsruhe Institute of Technology, Karlsruhe, Germany ORCID (unauthenticated)
ThomasZwick Institute of Radio Frequency Engineering and Electronics, Karlsruhe Institute of Technology, Karlsruhe, Germany ORCID (unauthenticated)
Cite
Bhutani, Akanksha, et al. “200–330-GHz Substrate-Integrated Waveguide in BEOL of a SiGe BiCMOS Process”. IEEE Microwave and Wireless Technology Letters, vol. 33, no. 9, 2023, pp. 1258-61, https://doi.org/10.1109/lmwt.2023.3283304.
Bhutani, A., Kaynak, M., Bekker, E., & Zwick, T. (2023). 200–330-GHz Substrate-Integrated Waveguide in BEOL of a SiGe BiCMOS Process. IEEE Microwave and Wireless Technology Letters, 33(9), 1258-1261. https://doi.org/10.1109/lmwt.2023.3283304
Bhutani A, Kaynak M, Bekker E, Zwick T. 200–330-GHz Substrate-Integrated Waveguide in BEOL of a SiGe BiCMOS Process. IEEE Microwave and Wireless Technology Letters. 2023;33(9):1258-61.
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2005
Bisect de embedding for network analyzer measurement