A 71–77-GHz Switch-Based Single-Chip Front End in 0.13-μm GaN Technology

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Hu, Zhifu, et al. “A 71–77-GHz Switch-Based Single-Chip Front End in 0.13-μm GaN Technology”. IEEE Microwave and Wireless Technology Letters, vol. 33, no. 7, 2023, pp. 1031-4, https://doi.org/10.1109/lmwt.2023.3253579.
Hu, Z., Ma, K., Liu, Y., He, M., & He, R. (2023). A 71–77-GHz Switch-Based Single-Chip Front End in 0.13-μm GaN Technology. IEEE Microwave and Wireless Technology Letters, 33(7), 1031-1034. https://doi.org/10.1109/lmwt.2023.3253579
Hu Z, Ma K, Liu Y, He M, He R. A 71–77-GHz Switch-Based Single-Chip Front End in 0.13-μm GaN Technology. IEEE Microwave and Wireless Technology Letters. 2023;33(7):1031-4.
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Refrences
Title Journal Journal Categories Citations Publication Date
39 GHz GaN front end MMIC for 5G applications 2017
W-band GaN MMIC PA with 257 mW output power at 86.5 GHz Journal of Semiconductors
  • Science: Physics
 2015
An E-band transceiver with 5 GHz IF bandwidth 2014
10.1109/TMTT.2017.2688438
10.1109/LMWC.2018.2886066