Title | Journal | Journal Categories | Citations | Publication Date |
---|---|---|---|---|
The impact of assist-circuit design for 22 nm SRAM and beyond | 2012 | |||
Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6 V 32 nm LP SRAM | ||||
10-nm SRAM Design Using Gate-Modulated Self-Collapse Write-Assist Enabling 175-mV V MIN Reduction With Negligible Active Power Overhead | IEEE Solid-State Circuits Letters |
| 2 | 2021 |
10.1109/vlsit.2018.8510704 | ||||
10.1109/vlsic.2016.7573460 |