Energy-Efficient High Bandwidth 6T SRAM Design on Intel 4 CMOS Technology

Article Properties
  • Publication Date
    2023/04/01
  • Indian UGC (journal)
  • Refrences
    18
  • Yusung Kim Advanced Design, Technology Development, Intel Corporation, Hillsboro, OR, USA ORCID (unauthenticated)
  • Clifford Ong Advanced Design, Technology Development, Intel Corporation, Hillsboro, OR, USA
  • Anandkumar Mahadevan Pillai Advanced Design, Technology Development, Intel Corporation, Hillsboro, OR, USA
  • Harish Jagadeesh Advanced Design, Technology Development, Intel Corporation, Hillsboro, OR, USA
  • Gwanghyeon Baek Advanced Design, Technology Development, Intel Corporation, Hillsboro, OR, USA
  • Iqbal Rajwani Accelerated Computing Systems and Graphics (AXG), Intel Corporation, Folsom, CA, USA
  • Zheng Guo Advanced Design, Technology Development, Intel Corporation, Hillsboro, OR, USA ORCID (unauthenticated)
  • Eric Karl Advanced Design, Technology Development, Intel Corporation, Hillsboro, OR, USA
Journal Categories
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Electric apparatus and materials
Electric circuits
Electric networks
Technology
Electrical engineering
Electronics
Nuclear engineering
Electronics
Technology
Engineering (General)
Civil engineering (General)
Refrences
Title Journal Journal Categories Citations Publication Date
The impact of assist-circuit design for 22 nm SRAM and beyond 2012
Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6 V 32 nm LP SRAM
10-nm SRAM Design Using Gate-Modulated Self-Collapse Write-Assist Enabling 175-mV V MIN Reduction With Negligible Active Power Overhead IEEE Solid-State Circuits Letters
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics: Computer engineering. Computer hardware
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
2 2021
10.1109/vlsit.2018.8510704
10.1109/vlsic.2016.7573460