TMR-Based Logic-in-Memory Circuit for Low-Power VLSI
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2005/06/01
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Indian UGC (journal)
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Citations33
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A. MOCHIZUKI
Cite
MOCHIZUKI, A. “TMR-Based Logic-in-Memory Circuit for Low-Power VLSI”. IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, vol. E88-A, no. 6, 2005, pp. 1408-15, https://doi.org/10.1093/ietfec/e88-a.6.1408.
MOCHIZUKI, A. (2005). TMR-Based Logic-in-Memory Circuit for Low-Power VLSI. IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, E88-A(6), 1408-1415. https://doi.org/10.1093/ietfec/e88-a.6.1408
MOCHIZUKI, A. “TMR-Based Logic-in-Memory Circuit for Low-Power VLSI”. IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences E88-A, no. 6 (2005): 1408-15. https://doi.org/10.1093/ietfec/e88-a.6.1408.
MOCHIZUKI A. TMR-Based Logic-in-Memory Circuit for Low-Power VLSI. IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. 2005;E88-A(6):1408-15.
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Citations Analysis
The category
Science: Physics 28
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Magnetic Tunnel Junctions for Spintronic Memories and Beyond and was published in 2007. The most recent citation comes from a 2024 study titled Design of energy-efficient hybrid STT-MTJ/CMOS-based LIM logic gates for IoT applications. This article reached its peak citation in 2012, with 6 citations. It has been cited in 13 different journals, 15% of which are open access. Among related journals, the Japanese Journal of Applied Physics cited this research the most, with 14 citations. The chart below illustrates the annual citation trends for this article.