Annealing of dislocation loops in dislocation dynamics simulations

Article Properties
Cite
Mordehai, Dan, et al. “Annealing of Dislocation Loops in Dislocation Dynamics Simulations”. IOP Conference Series: Materials Science and Engineering, vol. 3, 2009, p. 012001, https://doi.org/10.1088/1757-899x/3/1/012001.
Mordehai, D., Clouet, E., Fivel, M., & Verdier, M. (2009). Annealing of dislocation loops in dislocation dynamics simulations. IOP Conference Series: Materials Science and Engineering, 3, 012001. https://doi.org/10.1088/1757-899x/3/1/012001
Mordehai, Dan, Emmanuel Clouet, Marc Fivel, and Marc Verdier. “Annealing of Dislocation Loops in Dislocation Dynamics Simulations”. IOP Conference Series: Materials Science and Engineering 3 (2009): 012001. https://doi.org/10.1088/1757-899x/3/1/012001.
Mordehai D, Clouet E, Fivel M, Verdier M. Annealing of dislocation loops in dislocation dynamics simulations. IOP Conference Series: Materials Science and Engineering. 2009;3:012001.
Refrences
Title Journal Journal Categories Citations Publication Date
Implementing image stresses in a 3D dislocation simulation Modelling and Simulation in Materials Science and Engineering
  • Science: Chemistry
  • Science: Physics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
 77 1996
Implementing image stresses in a 3D dislocation simulation 1971
Implementing image stresses in a 3D dislocation simulation 1982
Size distribution of dislocation loops Acta Metallurgica 21 1973
Ostwald ripening of end-of-range defects in silicon

 Journal of Applied Physics
  • Science: Chemistry: Physical and theoretical chemistry
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 140 1998
Citations
Title Journal Journal Categories Citations Publication Date
An improved method to model dislocation self-climb Modelling and Simulation in Materials Science and Engineering
  • Science: Chemistry
  • Science: Physics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
 1 2020
Citations Analysis
Category Category Repetition
Science: Chemistry1
Science: Physics1
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials1
Technology: Chemical technology1
The category Science: Chemistry 1 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled An improved method to model dislocation self-climb and was published in 2020. The most recent citation comes from a 2020 study titled An improved method to model dislocation self-climb. This article reached its peak citation in 2020, with 1 citations. It has been cited in 1 different journals. Among related journals, the Modelling and Simulation in Materials Science and Engineering cited this research the most, with 1 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year