Erasable Ferroelectric Domain Wall Diodes*
Article Properties
-
DOI (url)
-
Publication Date2021/01/01
-
Journal
-
Indian UGC (journal)
-
Refrences25
-
Citations4
-
Wei Zhang
-
Chao Wang
-
Jian-Wei Lian
-
Jun Jiang
-
An-Quan Jiang
Abstract
Cite
Zhang, Wei, et al. “Erasable Ferroelectric Domain Wall Diodes*”. Chinese Physics Letters, vol. 38, no. 1, 2021, p. 017701, https://doi.org/10.1088/0256-307x/38/1/017701.
Zhang, W., Wang, C., Lian, J.-W., Jiang, J., & Jiang, A.-Q. (2021). Erasable Ferroelectric Domain Wall Diodes*. Chinese Physics Letters, 38(1), 017701. https://doi.org/10.1088/0256-307x/38/1/017701
Zhang W, Wang C, Lian JW, Jiang J, Jiang AQ. Erasable Ferroelectric Domain Wall Diodes*. Chinese Physics Letters. 2021;38(1):017701.
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers | Nature Materials |
| 93 | 2020 |
Nonvolatile ferroelectric field-effect transistors | Nature Communications |
| 87 | 2020 |
| Resistive switching materials for information processing | Nature Reviews Materials |
| 663 | 2020 |
| Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories | Nature Materials |
| 180 | 2018 |
| Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls | Nature Nanotechnology |
| 145 | 2018 |
Refrences Analysis
The category
Science: Physics 28
is the most frequently represented among the references in this article. It primarily includes studies from Nature Materials The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Roadmap for ferroelectric domain wall memory | Microstructures |
| 2 | 2024 |
| High-Power LiNbO3 Domain-Wall Nanodevices | ACS Applied Materials & Interfaces |
| 6 | 2023 |
| Diode-Like Behavior Based on Conductive Domain Wall in LiNbO Ferroelectric Single-Crystal Thin Film | IEEE Electron Device Letters |
| 2023 | |
Interplay of domain structure and phase transitions: theory, experiment and functionality | Journal of Physics: Condensed Matter |
| 2021 |
Citations Analysis
The category
Technology: Chemical technology 2
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Interplay of domain structure and phase transitions: theory, experiment and functionality and was published in 2021. The most recent citation comes from a 2024 study titled Roadmap for ferroelectric domain wall memory. This article reached its peak citation in 2023, with 2 citations. It has been cited in 4 different journals. Among related journals, the Microstructures cited this research the most, with 1 citations. The chart below illustrates the annual citation trends for this article.