Design and simulation of low-threshold antimonide intersubband lasers
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date1998/08/10
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Journal
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Indian UGC (journal)
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Refrences15
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Citations51
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I. Vurgaftman Code 5613, Naval Research Laboratory, Washington, DC 20375
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J. R. Meyer Code 5613, Naval Research Laboratory, Washington, DC 20375
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F. H. Julien Institut d’Électronique Fondamentale, URA CNRS 22, Université Paris-Sud, 91405 Orsay, France
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L. R. Ram-Mohan Worcester Polytechnic Institute, Worcester, Massachusetts 01609
Abstract
Cite
Vurgaftman, I., et al. “Design and Simulation of Low-Threshold Antimonide Intersubband Lasers”. Applied Physics Letters, vol. 73, no. 6, 1998, pp. 711-3, https://doi.org/10.1063/1.121976.
Vurgaftman, I., Meyer, J. R., Julien, F. H., & Ram-Mohan, L. R. (1998). Design and simulation of low-threshold antimonide intersubband lasers. Applied Physics Letters, 73(6), 711-713. https://doi.org/10.1063/1.121976
Vurgaftman I, Meyer JR, Julien FH, Ram-Mohan LR. Design and simulation of low-threshold antimonide intersubband lasers. Applied Physics Letters. 1998;73(6):711-3.
Journal Categories
Science
Chemistry
Physical and theoretical chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
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Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| 10.1103/PhysRevLett.80.2185 | Physical Review Letters |
| 1998 | |
Near-room-temperature mid-infrared interband cascade laser | Applied Physics Letters |
| 87 | 1998 |
| High-power continuous-wave quantum cascade lasers | IEEE Journal of Quantum Electronics |
| 85 | 1998 |
| 10.1016/S0038-1098(96)00711-9 | Solid State Communications |
| 1997 | |
Long-wavelength (≈15.5 μm) unipolar semiconductor laser in GaAs quantum wells | Applied Physics Letters |
| 104 | 1997 |
Refrences Analysis
The category
Science: Physics 20
is the most frequently represented among the references in this article. It primarily includes studies from Applied Physics Letters The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| InAs-based quantum cascade lasers with enhanced confinement | Semiconductor Science and Technology |
| 2015 | |
| Quantum Cascade Lasers in the InAs/AlSb Material System | IEEE Journal of Selected Topics in Quantum Electronics |
| 2 | 2015 |
| Atomic scale interface engineering for strain compensated epitaxially grown InAs/AlSb superlattices | Nanotechnology |
| 10 | 2010 |
| Thermal Analysis of InAs/AlSb Short Wavelength Mid-IR Quantum Cascade Lasers | Chinese Physics Letters |
| 2009 | |
| On the possibility of designing interacting semiconductor quantum wells with zero perturbation coupling | Solid State Communications |
| 2007 |
Citations Analysis
The category
Science: Physics 40
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures and was published in 1999. The most recent citation comes from a 2015 study titled InAs-based quantum cascade lasers with enhanced confinement. This article reached its peak citation in 2001, with 10 citations. It has been cited in 21 different journals, 4% of which are open access. Among related journals, the Applied Physics Letters cited this research the most, with 12 citations. The chart below illustrates the annual citation trends for this article.