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Kim, J., Joshi, A., Lo, G., Kwong, D., & Lee, S. (1993). Electrical properties of Si-implanted gate oxides. Electronics Letters, 29(1), 34-35. https://doi.org/10.1049/el:19930022
Kim J, Joshi A, Lo G, Kwong D, Lee S. Electrical properties of Si-implanted gate oxides. Electronics Letters. 1993;29(1):34-5.