110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs
Article Properties
-
LanguageEnglish
-
DOI (url)
-
Publication Date1987/05/07
-
Journal
-
Indian UGC (journal)
-
Refrences3
-
Citations27
-
D.G. Parker
-
P.G. Say
-
A.M. Hansom
-
W. Sibbett
Cite
Parker, D.G., et al. “110 GHz High-Efficiency Photodiodes Fabricated from Indium Tin Oxide GaAs”. Electronics Letters, vol. 23, no. 10, 1987, pp. 527-8, https://doi.org/10.1049/el:19870380.
Parker, D., Say, P., Hansom, A., & Sibbett, W. (1987). 110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs. Electronics Letters, 23(10), 527-528. https://doi.org/10.1049/el:19870380
Parker D, Say P, Hansom A, Sibbett W. 110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs. Electronics Letters. 1987;23(10):527-8.
Journal Categories
Technology
Electrical engineering
Electronics
Nuclear engineering
Technology
Electrical engineering
Electronics
Nuclear engineering
Electric apparatus and materials
Electric circuits
Electric networks
Technology
Electrical engineering
Electronics
Nuclear engineering
Electronics
You May Also Like
- Solitons in Optical Metamaterials by Functional Variable Method and First Integral Approach
- Design of a miniaturized branch line microstrip coupler with a simple structure using artificial neural network
- Wilkinson Power Divider with Band-pass Filtering Response and Harmonics Suppression Using Open and Short Stubs
- Surface Plasmon Resonance for Biosensing: A Mini-Review
- An Anisotropic PML Absorbing Media for the FDTD Simulation of Fields in Lossy and Dispersive Media
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Title | 1986 | |||
| Title | 1985 | |||
| Title | 1983 |
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Schottky barrier contact on In0.53Ga0.47As with short-wave infrared transparent conductive oxide | Applied Physics Letters |
| 2022 | |
| Dramatically Enhanced Efficiency in Ultra-Fast Silicon MSM Photodiodes Via Light Trapping Structures | IEEE Photonics Technology Letters |
| 1 | 2019 |
| Single tone and multi tone microwave over fiber communication system using direct detection method | Optik |
| 9 | 2012 |
| ITO-Schottky Photodiodes for High-Performance Detection in the UV–IR Spectrum | IEEE Journal of Selected Topics in Quantum Electronics |
| 1 | 2004 |
High-Speed Solar-Blind AlGaN Schottky Photodiodes | MRS Online Proceedings Library | 2003 |
Citations Analysis
The category
Science: Physics 20
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Factors affecting fiber-optic transmission quality and was published in 1988. The most recent citation comes from a 2022 study titled Schottky barrier contact on In0.53Ga0.47As with short-wave infrared transparent conductive oxide. This article reached its peak citation in 1991, with 5 citations. It has been cited in 15 different journals. Among related journals, the IEEE Photonics Technology Letters cited this research the most, with 7 citations. The chart below illustrates the annual citation trends for this article.