Intrinsic Switchable Valley-Polarized Photocurrent in ε-InSe

Article Properties
  • Language
    English
  • Publication Date
    2024/01/25
  • Journal
  • Indian UGC (journal)
  • Refrences
    43
  • Qinxue Yin Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, ChinaSchool of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, ChinaState Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
  • Xiao Xing Center for Transformative Science, Shanghai Tech University, Shanghai 201210, China
  • Qiaoyan Hao State Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
  • Zeyu Zhang School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China ORCID
  • Chunwei Wang School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, ChinaState Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
  • Xingyu Yue School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, ChinaState Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
  • Ziwei Li Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China ORCID
  • Wenjing Zhang State Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China ORCID
  • Yuxin Leng School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, ChinaState Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
  • Juan Du School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, ChinaState Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China ORCID
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Refrences
Title Journal Journal Categories Citations Publication Date
Rashba valleys and quantum Hall states in few-layer black arsenic Nature
  • Science: Science (General)
32 2021
10.1103/PhysRevLett.122.127401
Electrically switchable Berry curvature dipole in the monolayer topological insulator WTe2 Nature Physics
  • Science: Physics
  • Science: Physics
247 2018
Engineering symmetry breaking in 2D layered materials Nature Reviews Physics
  • Science: Physics
  • Science: Physics
  • Science: Physics
139 2021
Valleytronics in 2D materials Nature Reviews Materials
  • Technology: Chemical technology
  • Science: Chemistry
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
1,664 2016