Ab Initio Study on Electronic Excited States of Monochlorosilylene

Article Properties
  • Language
    English
  • Publication Date
    2024/04/16
  • Indian UGC (journal)
  • Refrences
    43
  • Lili Bian Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
  • Shimin Shan School of Science, North University of China, Taiyuan 030051, China
  • Yi Lian Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
  • Lidan Xiao Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China ORCID
  • Di Liu Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
  • Chao Li Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China ORCID
  • Haifeng Xu Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China ORCID
  • Bing Yan Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China ORCID
Refrences
Title Journal Journal Categories Citations Publication Date
Heats of formation of chlorosilanes (SiHmCln) calculated by ab initio molecular orbital methods The Journal of Physical Chemistry 48 1993
Laser-induced fluorescence of the HSiF radical Chemical Physics Letters
  • Science: Chemistry: Physical and theoretical chemistry
  • Science: Physics: Atomic physics. Constitution and properties of matter
  • Science: Chemistry: Physical and theoretical chemistry
  • Science: Chemistry
28 1983
Chemical reaction jet spectroscopy, molecular structure, and the bending potential of the Ã 1A″ state of monofluorosilylene (HSiF)

The Journal of Chemical Physics
  • Science: Chemistry: Physical and theoretical chemistry
  • Science: Physics: Atomic physics. Constitution and properties of matter
  • Science: Chemistry: Physical and theoretical chemistry
  • Science: Chemistry
20 1995
Dichlorosilylene: A High Temperature Transient Species to an Indispensable Building Block Accounts of Chemical Research
  • Science: Chemistry: General. Including alchemy
  • Science: Chemistry: Analytical chemistry
  • Science: Chemistry
198 2012
Spatial profile monitoring of etch products of silicon in HBr∕Cl2∕O2∕Ar plasma

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
9 2007