InAs/AlGaSb nanoscale device fabrication using AFM oxidation process
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date1998/07/01
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Indian UGC (journal)
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Refrences6
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S. Sasa
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T. Ikeda
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C. Dohno
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M. Inoue
Cite
Sasa, S., et al. “InAs/AlGaSb/Nanoscale/Device/Fabrication/Using/AFM/Oxidation/Process”. Physica E: Low-Dimensional Systems and Nanostructures, vol. 2, no. 1-4, 1998, pp. 858-61, https://doi.org/10.1016/s1386-9477(98)00175-1.
Sasa, S., Ikeda, T., Dohno, C., & Inoue, M. (1998). InAs/AlGaSb nanoscale device fabrication using AFM oxidation process. Physica E: Low-Dimensional Systems and Nanostructures, 2(1-4), 858-861. https://doi.org/10.1016/s1386-9477(98)00175-1
Sasa S, Ikeda T, Dohno C, Inoue M. InAs/AlGaSb nanoscale device fabrication using AFM oxidation process. Physica E: Low-dimensional Systems and Nanostructures. 1998;2(1-4):858-61.
Journal Categories
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
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Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| 10.1143/JJAP.34.1329 | Japanese Journal of Applied Physics |
| 1995 | |
Fabrication of GaAs nanostructures with a scanning tunneling microscope | Applied Physics Letters |
| 39 | 1993 |
Surface donor contribution to electron sheet concentrations in not-intentionally doped InAs-AlSb quantum wells | Applied Physics Letters |
| 73 | 1992 |
Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air | Applied Physics Letters |
| 567 | 1990 |
| 10.1103/PhysRevLett.62.1173 | Physical Review Letters |
| 1989 |
Refrences Analysis
The category
Science: Physics 10
is the most frequently represented among the references in this article. It primarily includes studies from Applied Physics Letters The chart below illustrates the number of referenced publications per year.