Memory effects in MOS capacitors with silicon quantum dots

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Journal Category
Technology
Chemical technology
Biotechnology
Refrences
Title Journal Journal Categories Citations Publication Date
A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxide IEEE Electron Device Letters
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
33 1999
A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxide 1998
A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxide 1995
A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxide 1993
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