Enhancing the memristive effects in SnO2 nanowire networks
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2023/09/01
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Journal
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Indian UGC (journal)
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Refrences49
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Lucas A. Moisés ORCID (unauthenticated)
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Adenilson J. Chiquito
Journal Categories
Science
Chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
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Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Impact of oxygen vacancies on the formation and structure of filaments in SiO2-based memristors | Technical Physics Letters |
| 2020 | |
| Mimicking synaptic plasticity and learning behaviours in solution processed SnO2 memristor | Journal of Alloys and Compounds |
| 35 | 2018 |
Combination of conductive filaments and Schottky behavior in multifunctional Sn1−xCuxO2−δ memristor | Applied Physics Letters |
| 11 | 2017 |
| Interface-type resistive switching in perovskite materials | Journal of Electroceramics |
| 95 | 2017 |
State of the art of metal oxide memristor devices | Nanotechnology Reviews |
| 126 | 2016 |
Refrences Analysis
The category
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 48
is the most frequently represented among the references in this article. It primarily includes studies from Applied Physics Letters and Nanotechnology. The chart below illustrates the number of referenced publications per year.